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EDB2432B4MA-1DAAT-F-D

厂商名称: Micron Technology, Inc.

EDB2432B4MA-1DAAT-F-D元件分类: 存储器

EDB2432B4MA-1DAAT-F-D英文描述:
DDR DRAM, 64MX32, CMOS, PBGA134

EDB2432B4MA-1DAAT-F-D相关的参考设计

  • 参数列表
  • 在这购买
  • EDB2432B4MA-1DAAT-F-D功能数量
    1
    EDB2432B4MA-1DAAT-F-D端子数量
    134
    EDB2432B4MA-1DAAT-F-D额定供电电压
    1.2  V
    EDB2432B4MA-1DAAT-F-D最小供电/工作电压
    1.14  V
    EDB2432B4MA-1DAAT-F-D最大供电/工作电压
    1.3  V
    EDB2432B4MA-1DAAT-F-D加工封装描述
    FBGA-134
    EDB2432B4MA-1DAAT-F-Dreach_compliant
    Yes
    EDB2432B4MA-1DAAT-F-D状态
    Active
    EDB2432B4MA-1DAAT-F-D存取方式
    SINGLE BANK PAGE BURST
    EDB2432B4MA-1DAAT-F-Djesd_30_code
    R-PBGA-B134
    EDB2432B4MA-1DAAT-F-D存储密度
    2.147483648E9  bit
    EDB2432B4MA-1DAAT-F-D内存IC类型
    DDR DRAM
    EDB2432B4MA-1DAAT-F-D内存宽度
    32
    EDB2432B4MA-1DAAT-F-D端口数
    1
    EDB2432B4MA-1DAAT-F-D位数
    6.7108864E7  words
    EDB2432B4MA-1DAAT-F-D位数
    64M
    EDB2432B4MA-1DAAT-F-D操作模式
    SYNCHRONOUS
    EDB2432B4MA-1DAAT-F-D组织
    64MX32
    EDB2432B4MA-1DAAT-F-D包装材料
    PLASTIC/EPOXY
    EDB2432B4MA-1DAAT-F-Dpackage_code
    VFBGA
    EDB2432B4MA-1DAAT-F-D包装形状
    RECTANGULAR
    EDB2432B4MA-1DAAT-F-D包装尺寸
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH
    EDB2432B4MA-1DAAT-F-Dseated_height_max
    1.0  mm
    EDB2432B4MA-1DAAT-F-D表面贴装
    YES
    EDB2432B4MA-1DAAT-F-D工艺
    CMOS
    EDB2432B4MA-1DAAT-F-D端子形式
    BALL
    EDB2432B4MA-1DAAT-F-D端子间距
    0.65  mm
    EDB2432B4MA-1DAAT-F-D端子位置
    BOTTOM
    EDB2432B4MA-1DAAT-F-Dlength
    11.5  mm
    EDB2432B4MA-1DAAT-F-Dwidth
    10.0  mm
    EDB2432B4MA-1DAAT-F-Dadditional_feature
    SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

    目前在售EDB2432B4MA-1DAAT-F-D的授权分销商:

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