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  • 最大击穿电压(V):
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    最小击穿电压(V):
    - 确定
    最大直流触发电流(mA):
    - 确定
    额定保持电流(A):
    - 确定
    端子数量:
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    名称 厂商 描述
    Silicon Controlled Rectifier, 300mA I(T), 200V V(DRM)
    0.47A, 200V, SCR, TO-92
    0.47A, 200V, SCR, TO-92
    0.47 A, 400 V, 可控硅整流器
    0.47 A, 400 V, SCR
    Silicon Controlled Rectifier, 300mA I(T), 400V V(DRM)
    0.47 A, 400 V, 可控硅整流器
    0.47 A, 400 V, SCR
    0.47A, 400V, SCR, TO-92
    0.47A, 400V, SCR, TO-92
    0.47 A, 400 V, SCR, TO-92
    102
    ABBATRON HH SMITH - 102 - BANANA 插头; 15A; STUD
    ABBATRON HH SMITH - 102 - BANANA PLUG; 15A; STUD
    10 A, 800 V, 可控硅整流器
    10 A, 800 V, SCR
    10 A, 800 V, 可控硅整流器
    10 A, 800 V, SCR
    1600 V, 可控硅整流器
    1600 V, SCR
    Silicon Controlled Rectifier, 12.5A I(T)RMS, 8000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
    PACE - 1309-0054-P10 - COLLECTION CHAMBER; SX80; PK10
    DESCO - 13515 - BAG; ANTI-静态的 STORAGE
    DESCO - 13515 - BAG; ANTI-STATIC STORAGE
    可控硅整流器,200V V(DRM),235A I(T),TO-209AB
    SILICON CONTROLLED RECTIFIER,200V V(DRM),235A I(T),TO-209AB
    可控硅整流器,200V V(DRM),235A I(T),TO-209AB
    SILICON CONTROLLED RECTIFIER,200V V(DRM),235A I(T),TO-209AB
    235 A, 可控硅整流器, TO-209AB
    235 A, SCR, TO-209AB
    235.5 A, 可控硅整流器, TO-93
    235.5 A, SCR, TO-93
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